Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...

Building on recent achievements at an emission wavelength of 450 nm, Swiss company Exalos has announced narrow-linewidth DFB ...

This design enables a narrow linewidth (typically 20 MHz at 450 nm) and wavelength precision. Additionally, the lasers ...

Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.

The bilateral funding from Innovate UK and Innosuisse will support the two-year QDHIGHSWIR research project into overcoming ...

Fraunhofer ISE and partners have developed a SiC-based medium voltage system technology for fast charging stations that will ...

Onsemi says the addition SiC JFET technology will complement its existing EliteSiC power portfolio and enable the company to ...

Electrical measurements on these diodes revealed that increasing their temperature from ambient to 573K produces a fall in ...

Preparing to offer just that in significant volume within the next few years is the Israeli-based producer of GaN power ...

The Vermont Gallium Nitride (V-GaN) Tech Hub — a consortium led by the University of Vermont (UVM) and including ...

David Marshall, as director of programmes, will oversee Filtronic’s portfolio of critical programmes, driving strategic ...

Efficient Power Conversion Corporation (EPC) has introduced the GaN-based EPC91200, a fully configured motor drive inverter ...